unisonic technologies co., ltd ut3009 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r502-624.a 30v, 78a n-channel fast switching power mosfets ? description the utc ut3009 is an n-channel enhancement power mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , low gate charge, ultra high cell density and high switching speed. this utc ut3009 is suitable for most of the synchronous buck converter applications, etc. ? features * r ds(on) =5.5m ? @ v dss =30v,i d =78a * high switching speed * low gate charge(typical 20.8nc) ? symbol 1.gate 2.drain 3.source ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ut3009l-tn3-r UT3009G-TN3-R to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
ut3009 preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-624.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v t c =25c 78 a continuous v gs @10v (note 1) t c =100c i d 55 a drain current pulsed (note 2) i dm 155 a avalanche current i ar 48 a single pulsed avalanche energy (note 3) e as 252 mj power dissipation (t c =25c) (note 4) p d 53 w junction temperature t j -55~175 c storage temperature t stg -55~175 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient (note 1) ja 62 c/w junction to case (note 1) jc 2.8 c/w notes: 1. the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. the data tested by pulsed, pulse width 300s, duty cycle 2%. 3. the eas data shows max. rating. the test condition is v dd =25v, v gs =10v, l=0.1mh, i as =48a. 4. the power dissipation is limit ed by 175c junction temperature.
ut3009 preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-624.a ? electrical characteristics (t j =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 30 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =1ma 96 . 4 mv/c t j =25c 1 drain-source leakage current i dss v ds =24v,v gs =0v t j =55c 5 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) 1.0 1.5 2.5 v v gs(th) temperature coefficient v gs(th) v ds =v gs , i d =250a -6.16 mv/c v gs =10v, i d =30a 4.7 5.5 m ? static drain-source on-state resistance (note 2) r ds(on) v gs =4.5v, i d =15a 7.5 9 m ? forward transconductance g fs v ds =5v, i d =30a 22 s dynamic parameters input capacitance c iss 2361 pf output capacitance c oss 315 pf reverse transfer capacitance c rss v gs =0v, v ds =15v, f=1.0mhz 237 pf switching parameters total gate charge (4.5v) q g 20.8 nc gate to source charge q gs 5.3 nc gate to drain charge q gd v gs =4.5v, v ds =20v, i d =12a 10.5 nc gate resistance r g v gs =0v, v ds =0v, f=1.0mhz 1.7 3.4 ? turn-on delay time t d(on) 7.2 9 13.5 ns rise time t r 17.3 21.6 32.4 ns turn-off delay time t d(off) 21.3 26.6 40 ns fall-time t f v dd =12v, v gs =10v, i d =5a, r g =3.3 ? 8.4 10.5 15.8 ns source- drain diode ratings and characteristics maximum body-diode continuous current (note 1,4) i s 78 a maximum body-diode pulsed current (note 2, 4) i sm v d =v g =0v, force current 155 a drain-source diode forward voltage (note 2) v sd i s =1a, v gs =0v, t j =25c 1 v single pulse avalanche energy (note 3 ) e as v dd =25v, l=0.1mh, i as =24a 63 mj notes: 1. the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. the data tested by pulsed, pulse width 300s, duty cycle 2%. 3. the min. value is 100% eas tested guarantee. 4. the data is theoretically the same as i d and i dm , in real applications, should be limited by total power dissipation.
ut3009 preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-624.a ? test circuits and waveforms v ds v gs t d(on) t r t on t d(off) t f t off 10% 90% switching time waveform e as 2 1 = l i as 2 bv dss -v dd bv dss bv dss i as v gs v dd unclamped inductive switching wave utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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